Brian M. McSkimming, PhD

About Me

I have had the distinct honor and pleasure of being a faculty member of the Engineering Pathways Program at The University of Oklahoma's Gallogly College of Engineering since July 2022, serving as an Assistant Professor.

My current research focus involves one's personal epistemology, the impact of prior experience on a learner's meaning making and resource activation, the associated effect on self-regulation, and curriculum threshold concepts - with attention placed both on engineering and computer education.  

Come visit me on LinkedIn at:

Selected Publications/Scholarly Works


Google Scholar:


M. Bollinger, B.M. McSkimming, “Of Microscopes and Meeting Places: A Literature Review Examining Barriers to Indigenous Participation in STEM”, Educ. Sci. 14, 145, (2024)

B.M. McSkimming, S. Mackay, A. Decker, “Identification of Threshold Concepts for Intermediate Computer Science Students”, Proceedings of the 2023 IEEE Frontiers in Education Conference (FIE 2023), October 18-21, 2023, College Station, TX, USA

S.E. Walden, R.L. Shehab, C.V. Haskins, B.M. McSkimming, J. Dirisina, J.A. Okolie, J. Kittur, A. Quiroga, “Engineering Catalyst – An Alternate Supported Path to the Same Destination”, Paper presented at 14th Annual First-Year Engineering Experience (FYEE) Conference, July, 2023, University of Tennessee in Knoxville, Tennessee, USA

B.M. McSkimming, S. Mackay, A. Decker, “Investigating the usage of Likert-style items within Computer Science Education Research Instruments”, Proceedings of the 2021 Frontiers in Education Conference, October 2021, Lincoln, NE, USA. (2021)

K. Galiano, J.I. Deitz, S.D. Carneval, D.A. Gleason, P.K. Paul, Z. Zhang, B. McSkimming, J.S. Speck, S.A. Ringel, T.J. Grassman, A.R. Arehart, J.P. Pelz, “Spatial Correlation of the Ec-0.57 eV Trap State with Edge Dislocations in Epitaxial n-Type Gallium Nitride”, J. Appl. Physics., 123, 224504, (2018)

A. Alexander, B.M. McSkimming, B. Arey, I. Arslan, C.J.K. Richardson, “Nucleation and Growth of Metamorphic Epitaxial Aluminum on silicon (111) 7x7 and √3x√3 Surfaces”, J. Mater. Res., 32, 21, (2017)

B.M. McSkimming, A. Alexander, M.H. Samuels, B. Arey, I. Arslan, C.J.K. Richardson, “Metamorphic Growth of Relaxed Single Crystalline Aluminum on Silicon (111)”, J. Vac. Sci. Technol. A 35, 021401, (2017)

B.M. McSkimming, C. Chaix, J.S. Speck, “High Nitrogen Flux Growth of GaN by Plasma Assisted Molecular Beam Epitaxy”, J. Vac. Sci. Technol. A 33, 05E128, (2015)

X.S. Nguyen, K. Lin, Z. Zhang, B. McSkimming, A.R. Arehart, J.S. Speck, S.A. Ringel, E.A. Fitzgerald, S.J. Chua, “Correlation of a generation-recombination center with a deep level trap in GaN”, Appl Phys Lett, 106, 102101, (2015)

J. Son, V. Chobpattana, B.M. McSkimming, S. Stemmer, “In-situ nitrogen plasma passivation of Al2O3/GaN interface states”, J Vac Sci Technol A, 33, 020602, (2015)

B.M. McSkimming, F. Wu, T. Huault, C. Chaix, J.S. Speck, “Plasma assisted molecular beam epitaxy of GaN with growth rates > 2.6 μm/h”, J Crys Growth, 386, 168-174, (2014)

H. Okumura, B.M. McSkimming, T. Huault, C. Chaix, J.S. Speck, “Growth diagram of N-face GaN (0001̅) grown at high rate by plasma-assisted molecular beam epitaxy”, Appl Phys Lett, 104, 012111, (2014)

C.M. Jackson, A.R. Arehart, E. Cinkilic, B. McSkimming, J.S. Speck, S.A. Ringel, “Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies”, J Appl Phys, 113, 204505, (2013)

J. Son, V. Chobpattana, B.M. McSkimming, S. Stemmer, “Fixed charge in high-k/GaN metal-oxide semiconductor capacitor structures”, Appl Phys Lett, 101, 102905, (2012)

C.A. Hurni, O. Bierwagen, J.R. Lang, B.M. McSkimming, C.S. Gallinat, E.C. Young, D.A. Browne, U.K. Mishra, J.S. Speck, “pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents”, Appl Phys Lett, 97, 222113, (2010)

T. Mano, M. Abbarachi, T. Kuroda, B. McSkimming, A. Ohtake, K. Mitsuishi, K. Sakoda, “Self-assembly of symmetric GaAs quantum dots on (111)A substrates: suppression of fine-structure splitting”, Appl Phys Express, 3, 065203, (2010)


U.S. Patent #10,566,214 – “Seed Layer Free Nanoporous Metal Deposition For Bonding”, John Goward, Chloe Fabien, Brian McSkimming, and Stephen Holmes.

U.S. Patent Application #16/833,614 – “Regrowth of Epitaxial Layer for Surface Recombination Velocity Reduction in Light Emitting Diodes”, Markus Broell, Michael Grundmann, Brian McSkimming, David Hwang, Stephen Lutgen, and Anurag Tyagi.

Curriculum Vitae

Full CV can be downloaded here. (Updated 8 April 2024)

Contact Information

Mailing Address:
Brian M. McSkimming
Assistant Professor, Engineering Pathways
The University of Oklahoma, Gallogly College of Engineering
222L Felgar Hall – McCasland Engineering Pathways Hub
865 Asp Avenue, Norman, OK 73019

How to contact me on campus:
Office: 222L Felgar Hall in the McCasland Engineering Pathways Hub
Fax: (405) 325-7508
Email: mcskimming AT ou DOT edu

Professional Activities

Professional Organizations

Journal Reviewer

Conference Program Committee/Associate Program Chair

Conference Reviewer

Conference Session Chair